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UCC27517DBVR

IC GATE DRVR LOW-SIDE SOT23-5

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UCC27517DBVR

IC GATE DRVR LOW-SIDE SOT23-5

Los pedidos superiores a $200 son elegibles para un regalo de estilo chino de edición limitada.

Los pedidos superiores a $200 son elegibles para un regalo de estilo chino de edición limitada.

Los pedidos superiores a $1000 califican para una exención de tarifa de envío de $30.

Los pedidos que superen los $5000 disfrutan de la exención de tarifas de envío y transacción.

Estas ofertas son aplicables tanto a clientes nuevos como existentes y son válidas desde el 1 de enero de 2024 hasta el 31 de diciembre de 2024..

  • Fabricante:

    TI

  • Ficha de datos:

    UCC27517DBVR datasheet

  • Paquete/Estuche:

    SOT23-5

  • categoria de producto:

    Chips IC

  • RoHS Status: Estado RoHS Lead free/RoHS Compliant

Envíe su solicitud de cotización ahora y esperamos brindarle una cotización dentro de mayo 06, 2024. Realice su pedido ahora y esperamos completar la transacción dentro de mayo 08, 2024. Ps: La hora es según GMT+8:00.

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UCC27517DBVR Detalles de producto

1 FEATURES

• Low-Cost, Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete       Solutions

• 4-A Peak Source and 4-A Peak Sink Symmetrical Drive

• Fast Propagation Delays (13-ns typical)

• Fast Rise and Fall Times (9-ns and 7-ns typical)

• 4.5-V to 18-V Single Supply Range

• Outputs Held Low During VDD UVLO (ensures glitch free operation at power-up and power-down)

• TTL and CMOS Compatible Input Logic Threshold (independent of supply voltage)

• Hysteretic Logic Thresholds for High Noise Immunity

• Dual Input Design (choice of an inverting (IN-pin) or non-inverting (IN+ pin) driver configuration)

– Unused Input Pin can be Used for Enable or Disable Function

• Output Held Low when Input Pins are Floating

• Input Pin Absolute Maximum Voltage Levels Not Restricted by VDD Pin Bias Supply Voltage

• Operating Temperature Range of -40°C to 140°C

• 5-Pin DBV (SOT-23) and 6-Pin DRS (3 mm x 3 mm WSON with exposed thermal pad) Package Options


2 APPLICATIONS

• Switch-Mode Power Supplies

• DC-to-DC Converters

• Companion Gate Driver Devices for Digital Power Controllers

• Solar Power, Motor Control, UPS

• Gate Driver for Emerging Wide Band-Gap Power Devices (such as GaN)


3 DESCRIPTION

The UCC27516 and UCC27517 single-channel, high-speed, low-side gate driver devices are capable of effectively driving MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27516 and UCC27517 are capable of sourcing and sinking high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.


The UCC27516 and UCC27517 provides 4-A source, 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V.


The UCC27516 and UCC27517 is designed to operate over a wide VDD range of 4.5 V to 18 V and wide temperature range of -40°C to 140°C. Internal Under Voltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5 V, along with best in class switching characteristics, is especially suited for driving emerging wide band-gap power switching devices such as GaN power semiconductor devices.


UCC27516 and UCC27517 features a dual-input design which offers flexibility of implementing both inverting (IN-pin) and non-inverting (IN+ pin) configuration with the same device. Either IN+ or IN- pin can be used to control the state of the driver output. The unused input pin can be used for enable and disable function. For safety purpose, internal pull-up and pull-down resistors on the input pins ensure that outputs are held low when input pins are in floating condition. Hence the unused input pin cannot be left floating and needs to be properly biased to ensure that driver output is in enabled for normal operation.


The input pin threshold of the UCC27516 and UCC27517 devices are based on TTL and CMOS-compatible low- voltage logic which is fixed and independent of the VDD supply voltage. Wide hysteresis between the high and low thresholds offers excellent noise immunity.

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