TPL7407LAQPWRQ1

1 Features

• Qualified for Automotive Applications

• AEC-Q100 Qualified With the Following Results:

– Device Temperature Grade 1: –40°C to

+125°C Ambient Operating Temperature Range

– Device HBM ESD Classification Level 2 – Device CDM ESD Classification Level C4B

• 600-mA Rated Drain Current (Per Channel)

• CMOS Pin-to-Pin Improvement of 7-channel Darlington Array (For Example: ULN2003A)

• Power Efficient (Very low VOL) – Less Than 4 Times Lower VOL at 100 mA Than Darlington Array

• Very Low Output Leakage < 10 nA Per Channel

• High-Voltage Outputs 30 V 

• Compatible with 1.8-V to 5-V Microcontroller and Logic Interface

• Internal Free-wheeling Diodes for Inductive Kickback Protection

• Input Pull-down Resistors Allows Tri-stating the Input Driver

• Input RC-Snubber to Eliminate Spurious Operation in Noisy Environment

• ESD Protection Exceeds JESD 22

– 2-kV HBM, 500-V CDM

2 Applications

• Inductive Loads

– Relays

– Unipolar Stepper and Brushed DC Motors

– Solenoids and Valves

• LEDs

• Logic Level Shifting

• Gate and IGBT Drive

3 Description

The TPL7407LA-Q1 is a high-voltage, high-current NMOS transistor array. This device consists of seven NMOS transistors that feature high-voltage outputs with common-cathode clamp diodes for switching inductive loads. The maximum drain-current rating of a single NMOS channel is 600 mA. New regulation and drive circuitry added to give maximum drive strength across all GPIO ranges (1.8 V–5 V).The transistors can be paralleled for higher current capability.

The TPL7407LA-Q1 key benefit is its improved power efficiency and lower leakage than a Bipolar Darlington Implementation. With the lower VOL the user is dissipating less than half the power than traditional relay drivers with currents less than 250 mA per channel.

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