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FDS6675BZ

MOSFET P-CH 30V 11A 8SOIC

FDS6675BZ
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FDS6675BZ

MOSFET P-CH 30V 11A 8SOIC

  • Fabricante：

    onsemiconductor

  • Ficha de datos：

    FDS6675BZ datasheet

  • Paquete/Estuche：

    8-SOIC (0.154", 3.90mm Width)

  • categoria de producto：

    Bujes, Ojales

  • RoHS Status：

Envíe su solicitud de cotización ahora y esperamos brindarle una cotización dentro de enero 17, 2026. Realice su pedido ahora y esperamos completar la transacción dentro de enero 22, 2026. Ps: La hora es según GMT+8:00.

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Existencias：19881 PCS

Nuestro compromiso es entregar cotizaciones rápidas dentro de las 12 horas. Para obtener más ayuda, por favor contáctenos en sales@censtry.com.

FDS6675BZ Reemplazo de piezas

Imagen y número de pieza Fabricantes Paquete/Estuche categoria de producto Ficha de datos Existencias Cita
Blue Rocket SOP-8 Bujes, Ojales 1058

FDS6675BZ Detalles de producto

Request a quote FDS6675BZ at censtry.com. All items are new and original with 365 days warranty! The excellent quality and guaranteed services of FDS6675BZ in stock for sale, check stock quantity and pricing, view product specifications, and order contact us：sales@censtry.com.
The price and lead time for FDS6675BZ depending on the quantity required, please send your request to us, our sales team will provide you price and delivery within 24 hours, we sincerely look forward to cooperating with you.

FDS6675BZ

Description

The FDS6675BZ is a high-performance P-channel PowerTrench MOSFET designed for efficient power usage in various applications. Key features include low drain-to-source on-resistance (rDS(on)), extended voltage range (-25V), and built-in ESD protection. This MOSFET is suitable for power-intensive circuits, ensuring reliable performance with a compact design.

Features

The FDS6675BZ P-Channel PowerTrench MOSFET features key attributes for efficient performance:
Low R_DS(on): At -10V V GS, it reaches 13mΩ, demonstrating excellent power handling.
Extended voltage range: Capable of operating at -25V, suitable for battery applications.
ESD protection: HBM level of 5.4 KV provides robust protection against electrostatic discharge.
High-performance trench technology: Ensures low on-resistance, crucial in high-efficiency designs. These features make the FDS6675BZ an ideal choice for applications requiring efficient power management and high reliability.

Package

The FDS6675BZ has an 8-SoIC (Small Outline Chip) package, which measures 0.154" by 3.90mm width.

Pinout

The FDS6675BZ is a P-Channel PowerTrench MOSFET. It doesn't specify a pin count, as the count would depend on the package (8-SOIC in this case). However, typical MOSFET packages have fewer than ten pins, connecting the gate and drain to the source and package. For more detailed information on the functions of each pin, consult the manufacturer's datasheet or contact their support.

Applications

The FDS6675BZ is a power MOSFET suitable for applications demanding high efficiency, reliable performance, and compact designs. It finds application in power electronics, battery management systems, and motor control systems.

Equivalent

The equivalent product of FDS6675BZ by onsemi is likely another P-Channel PowerTrench MOSFET with similar voltage and current ratings. Search for onsemi's MOSFET offerings within the same voltage range (-30V).

FDS6675BZ Productos Asociados

  • Fabricante Existencias Ficha de datos
  • FDS6990A FDS6990A

    onsemiconductor

    1968 PCS

    FDS6990A .PDF

  • FPF1204UCX FPF1204UCX

    onsemiconductor

    6722 PCS

    FPF1204UCX .PDF

  • MMBT5179 MMBT5179

    onsemiconductor

    6406 PCS

    MMBT5179 .PDF

  • FAN7393AMX FAN7393AMX

    onsemiconductor

    19642 PCS

    FAN7393AMX .PDF

FDS6675BZ Productos populares

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Política de devoluciones

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