IRL60B216

The benefits of the Strong IRFET™ IRL60B216 HEXFET® Power MOSFET for Logic Level Drive applications include being optimized for Logic Level Drive, improved Gate, Avalanche, and Dynamic dV/dt Ruggedness, fully characterized Capacitance and Avalanche SOA, enhanced body diode dV/dt and dI/dt Capability, Lead-Free*, and RoHS Compliant, Halogen-Free. Additionally, it has a VDSS of 60V, RDS(on) typ. 1.5mΩ, max 1.9mΩ, ID (Silicon Limited) 305A, and ID (Package Limited) 195A. Furthermore, the Strong IRFET™ IRL60B216 HEXFET® Power MOSFET is suitable for various applications such as Brushed Motor drive applications, BLDC Motor drive applications, Battery powered circuits, Half-bridge and full-bridge topologies, Synchronous rectifier applications, Resonant mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters, and DC/AC Inverters.

The typical on-resistance of the IRL60B2 MOSFET at a gate voltage of 6V is 1.5mΩ .

The Strong IRFET™ IRL60B216 HEXFET® Power MOSFET is mentioned to be used in various applications such as brushed motor drive applications, BLDC motor drive applications, battery-powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters, and DC/AC inverters . References: 1. Page 1 2. Page 2