IRF8301MTRPBF

The key features of the IRF8301MPbF Power MOSFET include: 1. Very low on-state resistance achieved through HEXFET Power MOSFET Silicon technology and DirectFET packaging . 2. DirectFET package compatibility with existing layout geometries and various soldering techniques . 3. Dual-sided cooling capability for maximizing thermal transfer in power systems . 4. Balancing low resistance, low charge, and ultra-low package inductance to reduce conduction and switching losses . 5. Ideal for power tools due to reduced total losses and high current carrying capability . 6. Ultra-low RDS(on) and low profile (<0.7 mm) design . 7. Optimized for high-speed switching or high current switch applications . 8. Absolute maximum ratings for various parameters such as gate-to-source voltage, continuous drain current, and pulsed drain current . 9. Ordering information for the IRF8301MPbF DirectFET including part number, package type, and standard pack quantity . The key features of the IRF8301MPbF Power MOSFET are its low resistance, compatibility with existing layouts, dual-sided cooling, reduced losses, and high current carrying capability. Additionally, it has a low profile design, is optimized for specific applications, and comes with detailed absolute maximum ratings and ordering information. .

The typical on-resistance of the IRF8301MPbF Power MOSFET at different gate voltages is shown in Figure 1.

The DirectFET package design of the IRF8301MPbF Power MOSFET contributes to its performance in power systems by offering very low on-state resistance, low charge, and ultra-low package inductance, which help reduce both conduction and switching losses