AO6800

The features of the AO6800 Dual N-Channel Enhancement Mode Field Effect Transistor include: 1. VDS (Drain-Source Voltage) = 30V 2. ID (Drain Current) = 3.4 A 3. RDS(ON) (Static Drain-Source On-Resistance) is less than 60mΩ at VGS = 10V, less than 75mΩ at VGS = 4.5V, and less than 115mΩ at VGS = 2.5V 4. It uses advanced trench technology to provide excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V 5. Suitable for use as a load switch or in PWM applications AO6800 Dual N-Channel Enhancement Mode Field Effect Transistor.

The AO6800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The maximum junction-to-ambient thermal resistance for the AO6800 Dual N-Channel Enhancement Mode Field Effect Transistor is 110°C/W .