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MMBT5401LT1G

TRANS PNP 150V 0.5A SOT23-3

MMBT5401LT1G
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MMBT5401LT1G

TRANS PNP 150V 0.5A SOT23-3

Envíe su solicitud de cotización ahora y esperamos brindarle una cotización dentro de abril 17, 2026. Realice su pedido ahora y esperamos completar la transacción dentro de abril 22, 2026. Ps: La hora es según GMT+8:00.

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Existencias：167218 PCS

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MMBT5401LT1G Reemplazo de piezas

Imagen y número de pieza Fabricantes Paquete/Estuche categoria de producto Ficha de datos Existencias Cita
Blue Rocket SOT-23 Matrices, transformadores de señal 1143

MMBT5401LT1G Detalles de producto

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MMBT5401LT1G

Description

The MMBT5401LT1G is a high voltage PNP bipolar junction transistor designed for switching and amplification applications. It features a compact SOT-23 package, suitable for small electronic designs. Key specifications include a collector current of up to 600mA, a maximum collector-emitter voltage of 160V, and a power dissipation capability of 225mW. The MMBT5401LT1G finds applications in audio amplifiers, signal processing circuits, and power management systems where high current capacity and voltage handling are required.

Features

The MMBT5401LT1G is a high-voltage PNP bipolar junction transistor (BJT). Key features include:
High Collector Current: It can handle up to 600mA collector current.
Wide Voltage Range: With a maximum VCEO of -150VDC, it's suitable for high-voltage applications.
Package Types: Available in TO-236-3, SC-59, and SOT-23-3 packages for compact designs.
Power Dissipation: It has a power dissipation rating of 225mW. These features make the MMBT5401LT1G suitable for applications requiring high current handling, wide voltage swings, or compact circuit layouts.

Package

The MMBT5401LT1G transistor has a SOT-23 package, suitable for compact electronic designs.

Pinout

The MMBT5401LT1G is a PNP bipolar junction transistor (BJT). It does not have specific pin-count information as it's typically found in the datasheet, which would include a pin diagram. To get accurate pin count and function details for the MMBT5401LT1G, refer to the official onsemi datasheet or contact their technical support.

Manufacturer

The MMBT5401LT1G is manufactured by onsemi, a leading global semiconductor company. It specializes in designing, producing, and selling a wide range of electronic components for various industries.

Applications

MMBT5401LT1G is a versatile PNP transistor ideal for amplification in audio applications, compact circuit projects for signal boosting, and general purpose electronic design.

Equivalent

The equivalent product of MMBT5401LT1G is likely another PNP bipolar junction transistor with similar specifications, such as ONSemi's BC807 or TIP41.

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Política de devoluciones

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Censtry ofrece una garantía de 365 días. En caso de devolución, la reemplazaremos si está disponible, o bien, si no lo está.